Publicacións en colaboración con investigadores/as de Indian Institute of Technology Bombay (4)

2010

  1. Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE

    Journal of Nanoscience and Nanotechnology

  2. Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

    Journal of Crystal Growth, Vol. 312, Núm. 5, pp. 724-729

2009

  1. A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

    Applied Physics A: Materials Science and Processing, Vol. 95, Núm. 3, pp. 713-720

  2. Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures

    Superlattices and Microstructures, Vol. 46, Núm. 4, pp. 611-617