DANIEL
FERNANDEZ DE LOS REYES
Profesor Titular de Universidad
University of Sheffield
Sheffield, Reino UnidoPublicaciones en colaboración con investigadores/as de University of Sheffield (8)
2024
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Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots
Nanomaterials, Vol. 14, Núm. 4
2023
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Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions
Applied Surface Science, Vol. 607
2022
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Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
Scientific Reports, Vol. 12, Núm. 1
2019
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Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies
Applied Surface Science, Vol. 485, pp. 29-34
2015
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Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures
Semiconductor Science and Technology, Vol. 30, Núm. 9
2014
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Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
Nanoscale Research Letters, Vol. 9, Núm. 1, pp. 1-8
2013
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Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy
Applied Physics Express, Vol. 6, Núm. 11
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Photoluminescence enhancement of InAs(Bi) quantum dots by bi clustering
Applied Physics Express, Vol. 6, Núm. 4