Publicaciones en las que colabora con Juan G. Lozano (29)

2012

  1. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

2011

  1. Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

    Journal of Alloys and Compounds, Vol. 509, Núm. 17, pp. 5400-5407

2010

  1. Natural oxidation of InN quantum dots: The role of cubic InN

    Physica Status Solidi (C) Current Topics in Solid State Physics

  2. Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase

    Nanotechnology, Vol. 21, Núm. 18

  3. Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

    Acta Materialia, Vol. 58, Núm. 12, pp. 4120-4125

2009

  1. Determination of the composition of InxGa1-xN from strain measurements

    Acta Materialia, Vol. 57, Núm. 19, pp. 5681-5692

  2. Structural changes during the natural aging process of InN quantum dots

    Journal of Applied Physics, Vol. 105, Núm. 1

2008

  1. Electron transport properties of indium oxide - Indium nitride metal-oxide-semiconductor heterostructures

    Physica Status Solidi (C) Current Topics in Solid State Physics

  2. Electronic and photoconductive properties of ultrathin InGaN photodetectors

    Journal of Applied Physics, Vol. 103, Núm. 7

  3. InN/In2O3 heterostructures

    Physica Status Solidi (C) Current Topics in Solid State Physics

  4. Strain relief and nucleation mechanisms of InN quantum dots

    Quantum Dots: Research, Technology and Applications (Nova Science Publishers, Inc.), pp. 267-298

  5. Structure of cubic polytype indium nitride layers on top of modified sapphire substrates

    Physica Status Solidi (C) Current Topics in Solid State Physics

2007

  1. Coalescence aspects of III-nitride epitaxy

    Journal of Applied Physics, Vol. 101, Núm. 5

  2. Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots

    Applied Physics Letters, Vol. 91, Núm. 7

  3. Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

    Applied Physics Letters, Vol. 90, Núm. 9

  4. Effect of island coalescence on structural and electrical properties of InN thin films

    Journal of Crystal Growth, Vol. 300, Núm. 1, pp. 50-56

  5. Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers

    Physica Status Solidi (C) Current Topics in Solid State Physics

  6. Strain mapping at the atomic scale in highly mismatched heterointerfaces

    Advanced Functional Materials, Vol. 17, Núm. 14, pp. 2588-2593

  7. Strain relief analysis of InN quantum dots grown on GaN

    Nanoscale Research Letters, Vol. 2, Núm. 9, pp. 442-446

2006

  1. Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy

    Superlattices and Microstructures, Vol. 40, Núm. 4-6 SPEC. ISS., pp. 289-294