Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Madrid (10)

2018

  1. GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

2017

  1. Strain-balanced type-II superlattices for efficient multi-junction solar cells

    Scientific Reports, Vol. 7, Núm. 1

  2. The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells

    Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122

  3. Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

    Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289

2012

  1. High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

    Applied Physics Letters, Vol. 101, Núm. 25

2004

  1. Anomalous relaxation in combined low and high temperature growth of InGaAs/GaAs epilayers

    Design and Nature

  2. Epilayer thickness influence on composition modulation of low temperature grown InGaAs/GaAs(001) layers

    Journal of Optoelectronics and Advanced Materials, Vol. 6, Núm. 3, pp. 805-810

  3. Thickness influence on spinodal decomposition in In0.2Ga 0.8As/GaAs low temperature growth

    Design and Nature

1997

  1. Advantages of thin interfaces in step-graded buffer structures

    Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 41-45

1996

  1. Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

    Journal of Crystal Growth, Vol. 169, Núm. 4, pp. 649-659