Publicaciones en colaboración con investigadores/as de Instituto de Ciencia de Materiales de Barcelona (36)

2015

  1. Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

    Journal of Crystal Growth, Vol. 420, pp. 47-56

  2. Growth of ferroelectric Ba0.8Sr0.2TiO3 epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers

    Applied Physics Letters, Vol. 106, Núm. 26

  3. High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga

    Nano Letters, Vol. 15, Núm. 5, pp. 2869-2874

  4. Induced shape controllability by tailored precursor design in thermal and microwave-assisted synthesis of (Formula presented.) nanoparticles

    Journal of Nanoparticle Research, Vol. 17, Núm. 7, pp. 1-11

  5. Interfacial effects on the tunneling magnetoresistance in L a0.7 S r0.3Mn O3/MgO/Fe tunneling junctions

    Physical Review B - Condensed Matter and Materials Physics, Vol. 92, Núm. 9

  6. Long-lived excitons in GaN/AlN nanowire heterostructures

    Physical Review B - Condensed Matter and Materials Physics, Vol. 91, Núm. 20

  7. Phonon Engineering in Isotopically Disordered Silicon Nanowires

    Nano Letters, Vol. 15, Núm. 6, pp. 3885-3893

  8. Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy

    Nano Letters, Vol. 15, Núm. 3, pp. 1773-1779

  9. Role of silicon nanowire diameter for alkyl (chain lengths C1-C18) passivation efficiency through Si-C bonds

    Langmuir, Vol. 31, Núm. 8, pp. 2430-2437

  10. Strain-induced spatially indirect exciton recombination in zinc-blende/wurtzite CdS heterostructures

    Nano Research, Vol. 8, Núm. 9, pp. 3035-3044

  11. Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

    Nanoscale, Vol. 7, Núm. 46, pp. 19453-19460

  12. Whispering gallery mode lasing from hexagonal shaped layered lead iodide crystals

    ACS Nano, Vol. 9, Núm. 1, pp. 687-695