Guillermo Aragón Torre-rekin lankidetzan egindako argitalpenak (9)

1994

  1. A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 196-199

  2. Study of the defects structure in GaAs1-xPx/GaAs as x<0.25

    Materials Research Society Symposium Proceedings

  3. TEM characterization of GaAs pin diodes at low temperatures on Si substrates

    Materials Research Society Symposium Proceedings

  4. Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519

1993

  1. A study of the evolution process of antiphase boundaries in GaAs on Si

    Journal of Electronic Materials, Vol. 22, Núm. 5, pp. 567-572

  2. Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

    Materials Letters, Vol. 15, Núm. 5-6, pp. 353-355

  3. Structural Characterization of GaP/GaAs/GaP heterostructure by TEM

    Materials Research Society Symposium Proceedings

  4. Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy

    Journal of Crystal Growth, Vol. 127, Núm. 1-4, pp. 596-600

1992

  1. High-resolution electron microscopy study of ALMBE InAs grown on (001) GaAs substrates

    Ultramicroscopy, Vol. 40, Núm. 3, pp. 370-375