DANIEL ARAUJO GAY-rekin lankidetzan egindako argitalpenak (13)

2025

  1. Retraction notice to “FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier” [Appl. Surf. Sci. 674 (2024) 160909] (Applied Surface Science (2024) 674, (S0169433224016222), (10.1016/j.apsusc.2024.160909))

    Applied Surface Science

2024

  1. FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier

    Applied Surface Science, Vol. 674

  2. Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: a STEM study

    6th International Conference on Applied Surface Science

  3. Microscopic evidence of carbide formation at the interface of tungsten-based ohmic contacts on diamond

    Applied Surface Science, Vol. 667

  4. Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study

    Nanotechnology, Vol. 35, Núm. 41

  5. Systematic approach for high piezoelectric AlN deposition

    Journal of Alloys and Compounds, Vol. 1008

  6. X-ray photoelectron spectroscopy study of surface chemical termination based on H, O, F-terminated diamond

    6th International Conference on Applied Surface Science

2021

  1. Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes

    Applied Surface Science, Vol. 537

  2. Diamond for electronics: Materials, processing and devices

    Materials, Vol. 14, Núm. 22

  3. Diamond/γ-alumina band offset determination by XPS

    Applied Surface Science, Vol. 535

  4. Dislocation generation mechanisms in heavily boron-doped diamond epilayers

    Applied Physics Letters, Vol. 118, Núm. 5

2020

  1. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

  2. Surface states of (100) o-terminated diamond: Towards other 1 × 1:O reconstruction models

    Nanomaterials, Vol. 10, Núm. 6, pp. 1-15