MANUEL DOMINGUEZ DE LA VEGA-rekin lankidetzan egindako argitalpenak (8)

1996

  1. Analysis of the crystallization kinetics in the semiconducting glassy alloy Cu0.20As0.35Te0.45

    Materials Chemistry and Physics, Vol. 43, Núm. 3, pp. 227-232

  2. Changes in the electrical conductivity of amorphous semiconductors

    Materials Chemistry and Physics, Vol. 45, Núm. 1, pp. 75-79

  3. Influence of the copper content on the electrical conductivity of amorphous semiconductors from the system CuAsSe

    Materials Chemistry and Physics, Vol. 43, Núm. 3, pp. 287-291

1995

  1. Influence of temperature and interelectrode distance on the negative differential resistance in metal-chalcogenide glassy semiconductors

    Journal of Materials Science, Vol. 30, Núm. 13, pp. 3407-3414

  2. On the Electrical Switching Characteristics of the Bulk Metal Chalcogenide Glassy Semiconductor Cu0.10As0.40Se0.50 with a Double Point Contact Electrode System

    physica status solidi (a), Vol. 147, Núm. 2, pp. 497-507

1994

  1. dc electrical properties of some metal-chalcogenide glassy alloys of the Cu-As-Se system

    Materials Letters, Vol. 19, Núm. 1-2, pp. 69-74

1991

  1. A study on short-range order in some alloys of the Cu-As-Se glassy system by X-ray radial distribution analysis

    Journal of Physics and Chemistry of Solids, Vol. 52, Núm. 4, pp. 567-573

1988

  1. On the electrical conduction and current-controlled negative differential resistance with memory in bulk samples of glassy semiconductor Cu 0.05As0.50Te0.45: NTC thermistor-type behaviour

    Semiconductor Science and Technology, Vol. 3, Núm. 11, pp. 1106-1111