José Luis Sánchez de Rojas Aldavero-rekin lankidetzan egindako argitalpenak (4)

2001

  1. Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

    Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392

1999

  1. Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 373-378

  2. Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescence

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 413-417

  3. Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 1 1)B GaAs for long wavelength applications

    Journal of Crystal Growth, Vol. 206, Núm. 4, pp. 287-293