Guillermo
Aragón Torre
Publicacions en què col·labora amb Guillermo Aragón Torre (28)
2002
-
AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
-
Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation
Microelectronics Journal
-
Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates
Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543
-
The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures
Microelectronics Journal
2001
-
Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 27-31
-
Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors
Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392
2000
-
Control of phase modulation in InGaAs epilayers
Applied Physics Letters, Vol. 76, Núm. 22, pp. 3236-3238
1999
-
Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes
Microelectronics Journal, Vol. 30, Núm. 4, pp. 427-431
-
Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layers
Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 302-304
-
Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers
Applied Physics Letters, Vol. 74, Núm. 18, pp. 2649-2651
-
Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy
Microelectronics Journal, Vol. 30, Núm. 4, pp. 373-378
-
Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBE
Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 558-561
-
New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well
Microelectronics Journal, Vol. 30, Núm. 4, pp. 467-470
-
Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut
Journal of Crystal Growth, Vol. 201, pp. 1085-1088
-
Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 1 1)B GaAs for long wavelength applications
Journal of Crystal Growth, Vol. 206, Núm. 4, pp. 287-293
1998
-
Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems
Applied Physics Letters, Vol. 72, Núm. 15, pp. 1875-1877
1997
-
A work-hardening based model of the strain relief in multilayer graded-buffer structures
Applied Physics Letters, Vol. 71, Núm. 21, pp. 3099-3101
-
Advantages of thin interfaces in step-graded buffer structures
Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 41-45
-
Work-hardening effects in the lattice relaxation of single lay er heterostructures
Applied Physics Letters, Vol. 71, Núm. 17, pp. 2475-2477
1994
-
A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 196-199