Javier Martín Sánchez-rekin lankidetzan egindako argitalpenak (5)

2013

  1. Influence of RF-sputtering power on formation of vertically stacked Si 1-x Ge x nanocrystals between ultra-thin amorphous Al 2 O 3 layers: Structural and photoluminescence properties

    Journal of Physics D: Applied Physics, Vol. 46, Núm. 38

2010

  1. Erratum: Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots (Physical Review B - Condensed Matter and Materials Physics (2010) 82 (235316))

    Physical Review B - Condensed Matter and Materials Physics

  2. Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission

    Nanoscale Research Letters, Vol. 5, Núm. 12, pp. 1913-1916

  3. Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 23

  4. Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots

    Journal of Physics: Conference Series