Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Departamento
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Leibniz Institute for Crystal Growth
Berlín, AlemaniaPublicaciones en colaboración con investigadores/as de Leibniz Institute for Crystal Growth (4)
2009
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Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
Journal of Applied Physics, Vol. 106, Núm. 2
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Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates
Microelectronics Journal, Vol. 40, Núm. 3, pp. 537-539
2007
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Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates
Applied Physics Letters, Vol. 91, Núm. 25
2006
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Effect of growth temperature on AlGaInN layers: A TEM analysis
Physica Status Solidi (C) Current Topics in Solid State Physics