Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Departamento
Instituto de Microelectrónica de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Madrid (58)
2018
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Exploring the capability of HAADF-STEM techniques to characterize graphene distribution in nanocomposites by simulations
Journal of Nanomaterials, Vol. 2018
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GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
2017
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Strain-balanced type-II superlattices for efficient multi-junction solar cells
Scientific Reports, Vol. 7, Núm. 1
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The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells
Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122
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Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289
2015
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Interfacial effects on the tunneling magnetoresistance in L a0.7 S r0.3Mn O3/MgO/Fe tunneling junctions
Physical Review B - Condensed Matter and Materials Physics, Vol. 92, Núm. 9
2014
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Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth
Materials Express, Vol. 4, Núm. 1, pp. 41-53
2013
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Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy
Journal of Physics: Conference Series
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Extreme voltage recovery in GaAs:Ti intermediate band solar cells
Solar Energy Materials and Solar Cells
2012
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Analysis of the 3D distribution of stacked selfassembled quantum dots by electron tomography
Nanoscale Research Letters, Vol. 7, Núm. 1, pp. 1-6
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High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
Applied Physics Letters, Vol. 101, Núm. 25
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InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps
Conference Record of the IEEE Photovoltaic Specialists Conference
2011
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Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy
Microscopy and Microanalysis, Vol. 17, Núm. 4, pp. 578-581
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Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy
AIP Conference Proceedings
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Strain balanced quantum posts
Applied Physics Letters, Vol. 98, Núm. 17
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Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
Materials Letters, Vol. 65, Núm. 11, pp. 1608-1610
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Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots
Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778
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Three dimensional atom probe imaging of GaAsSb quantum rings
Ultramicroscopy, Vol. 111, Núm. 8, pp. 1073-1076
2010
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Blocking of indium incorporation by antimony in III-V-Sb nanostructures
Nanotechnology, Vol. 21, Núm. 14
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Exploring semiconductor quantum dots and wires by high resolution electron microscopy
Journal of Physics: Conference Series