Física Aplicada
Departament
MANUEL
DOMINGUEZ DE LA VEGA
Catedrático de Universidad
Publicacions en què col·labora amb MANUEL DOMINGUEZ DE LA VEGA (11)
2024
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Size matters: how periodicity and depth of LIPSS influences E. coli adhesion on ferritic stainless steel
Applied Surface Science, Vol. 663
2023
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Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity
Applied Surface Science, Vol. 615
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Low temperature growth of nanocrystalline diamond: Insight thermal property
Diamond and Related Materials, Vol. 137
1996
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Analysis of the crystallization kinetics in the semiconducting glassy alloy Cu0.20As0.35Te0.45
Materials Chemistry and Physics, Vol. 43, Núm. 3, pp. 227-232
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Changes in the electrical conductivity of amorphous semiconductors
Materials Chemistry and Physics, Vol. 45, Núm. 1, pp. 75-79
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Influence of the copper content on the electrical conductivity of amorphous semiconductors from the system CuAsSe
Materials Chemistry and Physics, Vol. 43, Núm. 3, pp. 287-291
1995
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Influence of temperature and interelectrode distance on the negative differential resistance in metal-chalcogenide glassy semiconductors
Journal of Materials Science, Vol. 30, Núm. 13, pp. 3407-3414
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On the Electrical Switching Characteristics of the Bulk Metal Chalcogenide Glassy Semiconductor Cu0.10As0.40Se0.50 with a Double Point Contact Electrode System
physica status solidi (a), Vol. 147, Núm. 2, pp. 497-507
1994
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dc electrical properties of some metal-chalcogenide glassy alloys of the Cu-As-Se system
Materials Letters, Vol. 19, Núm. 1-2, pp. 69-74
1991
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A study on short-range order in some alloys of the Cu-As-Se glassy system by X-ray radial distribution analysis
Journal of Physics and Chemistry of Solids, Vol. 52, Núm. 4, pp. 567-573
1988
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On the electrical conduction and current-controlled negative differential resistance with memory in bulk samples of glassy semiconductor Cu 0.05As0.50Te0.45: NTC thermistor-type behaviour
Semiconductor Science and Technology, Vol. 3, Núm. 11, pp. 1106-1111