Publications en collaboration avec des chercheurs de École Polytechnique Fédérale de Lausanne (27)

2019

  1. The Role of Polarity in Nonplanar Semiconductor Nanostructures

    Nano Letters, Vol. 19, Núm. 6, pp. 3396-3408

2016

  1. Quantum heterostructures based on GaAs nanomembranes for photonic applications

    2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016

2015

  1. Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

    Journal of Crystal Growth, Vol. 420, pp. 47-56

  2. High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga

    Nano Letters, Vol. 15, Núm. 5, pp. 2869-2874

  3. Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

    Nanoscale, Vol. 7, Núm. 46, pp. 19453-19460

2014

  1. Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy

    Journal of Applied Physics, Vol. 116, Núm. 18

2013

  1. A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

    Journal of Materials Chemistry C, Vol. 1, Núm. 28, pp. 4300-4312

  2. Bandgap engineering in a nanowire: Self-assembled 0, 1 and 2D quantum structures

    Materials Today, Vol. 16, Núm. 6, pp. 213-219

  3. Gold nanoparticles protected by fluorinated ligands for 19F MRI

    Chemical Communications, Vol. 49, Núm. 78, pp. 8794-8796

2012

  1. Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis

    Nano Letters, Vol. 12, Núm. 5, pp. 2579-2586

1999

  1. Multiple quantum well GaAs/AlGaAs solar cells: Transport and recombination properties by means of EBIC and cathodoluminescence

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 66, Núm. 1, pp. 151-156

  2. Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates

    Applied Surface Science, Vol. 144-145, pp. 488-491

1996

  1. Cathodoluminescence study of the spatial distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As

    Journal of Applied Physics, Vol. 79, Núm. 11, pp. 8693-8703

1994

  1. Comparison of the lateral carrier transport between a GaAs single quantum well and the AlGaAs barrier during cathodoluminescence excitation

    Journal of Applied Physics, Vol. 76, Núm. 1, pp. 342-346

  2. Determination of the lateral distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As by cathodoluminescence

    Materials Science and Engineering B, Vol. 24, Núm. 1-3, pp. 124-129

  3. One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substrates

    Journal of Crystal Growth, Vol. 136, Núm. 1-4, pp. 173-178

1993

  1. Cathodoluminescence and photoluminescence studies of dislocations in GaAs/AlGaAs quantum wells

    Journal of Applied Physics, Vol. 74, Núm. 3, pp. 1997-2003

  2. Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates

    Semiconductor Science and Technology, Vol. 8, Núm. 6, pp. 1063-1068

  3. Lateral transport in GaAs/AlGaAs quantum wells

    Applied Physics Letters, Vol. 62, Núm. 23, pp. 2992-2994

  4. One step growth of buried heterostructures on non-planar InP substrates using chemical beam epitaxy

    1993 IEEE 5th International Conference on Indium Phosphide and Related Materials