Uniform low-to-high in composition InGaN layers grown on Si

  1. Aseev, P.
  2. Rodriguez, P.E.D.S.
  3. Kumar, P.
  4. Gómez, V.J.
  5. Alvi, N.U.H.
  6. Mánuel, J.M.
  7. Morales, F.M.
  8. Jiménez, J.J.
  9. García, R.
  10. Calleja, E.
  11. Nötzel, R.
Aldizkaria:
Applied Physics Express

ISSN: 1882-0778 1882-0786

Argitalpen urtea: 2013

Alea: 6

Zenbakia: 11

Mota: Artikulua

DOI: 10.7567/APEX.6.115503 GOOGLE SCHOLAR