Uniform low-to-high in composition InGaN layers grown on Si

  1. Aseev, P.
  2. Rodriguez, P.E.D.S.
  3. Kumar, P.
  4. Gómez, V.J.
  5. Alvi, N.U.H.
  6. Mánuel, J.M.
  7. Morales, F.M.
  8. Jiménez, J.J.
  9. García, R.
  10. Calleja, E.
  11. Nötzel, R.
Revue:
Applied Physics Express

ISSN: 1882-0778 1882-0786

Année de publication: 2013

Volumen: 6

Número: 11

Type: Article

DOI: 10.7567/APEX.6.115503 GOOGLE SCHOLAR