Growth mechanism and electronic properties of epitaxial In 2O3 films on sapphire

  1. Wang, Ch.Y.
  2. Kirste, L.
  3. Morales, F.M.
  4. Mánuel, J.M.
  5. Röhlig, C.C.
  6. Köhler, K.
  7. Cimalla, V.
  8. García, R.
  9. Ambacher, O.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2011

Volume: 110

Issue: 9

Type: Article

DOI: 10.1063/1.3658217 GOOGLE SCHOLAR
Data source: Scopus