Growth mechanism and electronic properties of epitaxial In 2O3 films on sapphire
- Wang, Ch.Y.
- Kirste, L.
- Morales, F.M.
- Mánuel, J.M.
- Röhlig, C.C.
- Köhler, K.
- Cimalla, V.
- García, R.
- Ambacher, O.
Revue:
Journal of Applied Physics
ISSN: 0021-8979
Année de publication: 2011
Volumen: 110
Número: 9
Type: Article