An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

  1. Herrera, M.
  2. González, D.
  3. Lozano, J.G.
  4. Gutierrez, M.
  5. García, R.
  6. Hopkinson, M.
  7. Liu, H.Y.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 2005

Volumen: 20

Número: 10

Pages: 1096-1102

Type: Article

DOI: 10.1088/0268-1242/20/10/019 GOOGLE SCHOLAR
La source de données: Scopus