AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

  1. Sánchez, A.M.
  2. Pacheco, F.J.
  3. Molina, S.I.
  4. Ruterana, P.
  5. Calle, F.
  6. Palacios, T.A.
  7. Sánchez-García, M.A.
  8. Calleja, E.
  9. García, R.
Revue:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology

ISSN: 0921-5107

Année de publication: 2002

Volumen: 93

Número: 1-3

Pages: 181-184

Type: Communication dans un congrès

DOI: 10.1016/S0921-5107(02)00030-2 GOOGLE SCHOLAR
La source de données: Scopus