Self-interstitial mechanism for Zn diffusion-induced disordering of GaAs/AlxGa1-xAs (x=0.1-1) multiple-quantum-well structures

  1. Ky, N.H.
  2. Ganière, J.D.
  3. Gailhanou, M.
  4. Blanchard, B.
  5. Pavesi, L.
  6. Burri, G.
  7. Araújo, D.
  8. Reinhart, F.K.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1993

Volumen: 73

Número: 8

Pages: 3769-3781

Type: Article

DOI: 10.1063/1.352883 GOOGLE SCHOLAR
La source de données: Scopus