Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

  1. Braza, V.
  2. Reyes, D.F.
  3. Gonzalo, A.
  4. Utrilla, A.D.
  5. Ben, T.
  6. Ulloa, J.M.
  7. González, D.
Zeitschrift:
Nanoscale Research Letters

ISSN: 1556-276X 1931-7573

Datum der Publikation: 2017

Ausgabe: 12

Art: Artikel

DOI: 10.1186/S11671-017-2129-2 GOOGLE SCHOLAR lock_openOpen Access editor