Filtering study of threading dislocations in AlN buffered MBE GaN/sapphire using single and multiple high temperature AlN intermediate layers

  1. Ponce, A.
  2. Sánchez, A.M.
  3. Molina, S.I.
  4. Fedler, F.
  5. Stemmer, J.
  6. Graul, J.
Revue:
Physica Status Solidi (A) Applied Research

ISSN: 0031-8965

Année de publication: 2002

Volumen: 192

Número: 2

Pages: 424-429

Type: Communication dans un congrès

DOI: 10.1002/1521-396X(200208)192:2<424::AID-PSSA424>3.0.CO;2-Q GOOGLE SCHOLAR