Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

  1. Sanchez, A.M.
  2. Pacheco, F.J.
  3. Molina, S.I.
  4. Stemmer, J.
  5. Aderhold, J.
  6. Graul, J.
Revue:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology

ISSN: 0921-5107

Année de publication: 2001

Volumen: 80

Número: 1-3

Pages: 299-303

Type: Article

DOI: 10.1016/S0921-5107(00)00645-0 GOOGLE SCHOLAR