Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy
- Laleyan, D.A.
- Fernández-Delgado, N.
- Reid, E.T.
- Wang, P.
- Pandey, A.
- Botton, G.A.
- Mi, Z.
Aldizkaria:
Applied Physics Letters
ISSN: 0003-6951
Argitalpen urtea: 2020
Alea: 116
Zenbakia: 15
Mota: Artikulua