Efficient blocking of planar defects by prismatic stacking faults in semipolar (11 2- 2) -GaN layers on m-sapphire by epitaxial lateral overgrowth
- Lacroix, B.
- Chauvat, M.P.
- Ruterana, P.
- Nataf, G.
- De Mierry, P.
Zeitschrift:
Applied Physics Letters
ISSN: 0003-6951
Datum der Publikation: 2011
Ausgabe: 98
Nummer: 12
Art: Artikel