Efficient blocking of planar defects by prismatic stacking faults in semipolar (11 2- 2) -GaN layers on m-sapphire by epitaxial lateral overgrowth

  1. Lacroix, B.
  2. Chauvat, M.P.
  3. Ruterana, P.
  4. Nataf, G.
  5. De Mierry, P.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2011

Volumen: 98

Número: 12

Type: Article

DOI: 10.1063/1.3571455 GOOGLE SCHOLAR