A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature
- Ruterana, P.
- Lacroix, B.
- Lorenz, K.
Aldizkaria:
Journal of Applied Physics
ISSN: 0021-8979
Argitalpen urtea: 2011
Alea: 109
Zenbakia: 1
Mota: Artikulua