Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes

Suzuki, M.
Yoshida, H.
Sakuma, N.
Ono, T.
Sakai, T.
Koizumi, S.

Journal:

Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2004

Volume: 84

Issue: 13

Pages: 2349-2351

Type: Article

DOI: 10.1063/1.1695206 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus