Characteristics of Mg-doped GaN and AlGaN grown by H2-ambient and N2-ambient metalorganic chemical vapor deposition
- Sugiura, L.
- Suzuki, M.
- Nishio, J.
- Itaya, K.
- Kokubun, Y.
- Ishikawa, M.
ISSN: 0021-4922
Year of publication: 1998
Volume: 37
Issue: 7
Pages: 3878-3881
Type: Article