Characteristics of Mg-doped GaN and AlGaN grown by H2-ambient and N2-ambient metalorganic chemical vapor deposition

  1. Sugiura, L.
  2. Suzuki, M.
  3. Nishio, J.
  4. Itaya, K.
  5. Kokubun, Y.
  6. Ishikawa, M.
Aldizkaria:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

ISSN: 0021-4922

Argitalpen urtea: 1998

Alea: 37

Zenbakia: 7

Orrialdeak: 3878-3881

Mota: Artikulua

DOI: 10.1143/JJAP.37.3878 GOOGLE SCHOLAR
Datuen iturria: Scopus