Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition

  1. Suzuki, M.
  2. Nishikawa, Y.
  3. Ishikawa, M.
  4. Kokubun, Y.
Revue:
Journal of Crystal Growth

ISSN: 0022-0248

Année de publication: 1991

Volumen: 113

Número: 1-2

Pages: 127-130

Type: Article

DOI: 10.1016/0022-0248(91)90017-Y GOOGLE SCHOLAR
La source de données: Scopus