Effect of high temperature single and multiple AIN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy

1. Fedler, F
2. Stemmer, J
3. Hauenstein, RJ
4. Rotter, T
5. Sanchez, AM
6. Ponce, A
7. Molina, S
8. Mistele, D
9. Klausing, H
10. Semchinova, O
11. Aderhold, J
12. Graul, J