DEFECT STRUCTURES IN HETEROEPITAXIAL INAS/GAAS AND GAAS/INAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY

  1. MOLINA, SI
  2. ARAGON, G
  3. GARCIA, R
Büchersammlung:
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY
  1. ASHOK, S (coord.)
  2. CHEVALLIER, J (coord.)
  3. SUMINO, K (coord.)
  4. WEBER, E (coord.)

ISBN: 1-55899-157-3

Datum der Publikation: 1992

Ausgabe: 262

Seiten: 163-168

Kongress: SYMP ON DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY, AT THE 1992 SPRING MEETING OF THE MATERIALS RESEARCH SOC

Art: Konferenz-Beitrag

DOI: 10.1557/PROC-262-163 GOOGLE SCHOLAR
Fuente de los datos: WoS