DEFECT STRUCTURES IN HETEROEPITAXIAL INAS/GAAS AND GAAS/INAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY

  1. MOLINA, SI
  2. ARAGON, G
  3. GARCIA, R
Liburu bilduma:
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY
  1. ASHOK, S (coord.)
  2. CHEVALLIER, J (coord.)
  3. SUMINO, K (coord.)
  4. WEBER, E (coord.)

ISBN: 1-55899-157-3

Argitalpen urtea: 1992

Alea: 262

Orrialdeak: 163-168

Biltzarra: SYMP ON DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY, AT THE 1992 SPRING MEETING OF THE MATERIALS RESEARCH SOC

Mota: Biltzar ekarpena

DOI: 10.1557/PROC-262-163 GOOGLE SCHOLAR
Datuen iturria: WoS