Unintentional Doping in GaAsSb/GaAsN Superlattice Solar Cells

  1. Schwarz, Malte 1
  2. Carro, A. Gallego 1
  3. Stanojević, L. 1
  4. Catalán-Gómez, S. 1
  5. Braza, V. 3
  6. Flores, S. 3
  7. Fernandez-Reyes, D. 3
  8. Ben, T. 3
  9. González, D. 3
  10. Guzman, A. 1
  11. Hierro, A. 1
  12. Aeberhard, U. 2
  13. Ulloa, J.M. 1
  1. 1 Instituto de Sistemas Optoelectrónicos y Microtecnología. Universidad Politécnica de Madrid. Madrid, Spain.
  2. 2 Fluxim AG, Winterthur, Switzerland.
  3. 3 Instituto de Microscopía Electrónica y Materiales (IMEYMAT). Universidad de Cádiz. Puerto Real, Spain.
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Actas:
2023 14th Spanish Conference on Electron Devices (CDE)

Año de publicación: 2023

Tipo: Aportación congreso

DOI: 10.1109/CDE58627.2023.10339430 GOOGLE SCHOLAR lock_openAcceso abierto editor

Resumen

GaAsSb/GaAsN superlattices (SL) outperform GaAsSbN bulk material in solar cells but still suffer from material imperfections. This work studies the presence of unintentional doping in different structures by means of a Mott-Schottky analysis. The SL structure is found to reduce unintentional doping by 40% with respect to the bulk material, correlating with the increased performance.

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