Materiales y Nanotecnología para la Innovación
TEP946
Universidad Complutense de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Complutense de Madrid (14)
2018
2015
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Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots
Semiconductor Science and Technology, Vol. 30, Núm. 11
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Interfacial effects on the tunneling magnetoresistance in L a0.7 S r0.3Mn O3/MgO/Fe tunneling junctions
Physical Review B - Condensed Matter and Materials Physics, Vol. 92, Núm. 9
2014
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Comparative study of micro- and nano-structured coatings for high-temperature oxidation in steam atmospheres
Oxidation of Metals
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Long-term high temperature oxidation of CrAl(Y)N coatings in steam atmosphere
Corrosion Science, Vol. 80, pp. 453-460
2013
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Influence of RF-sputtering power on formation of vertically stacked Si
1-x
Ge
x
nanocrystals between ultra-thin amorphous Al
2
O
3
layers: Structural and photoluminescence properties
Journal of Physics D: Applied Physics, Vol. 46, Núm. 38
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Extreme voltage recovery in GaAs:Ti intermediate band solar cells
Solar Energy Materials and Solar Cells
2012
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High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
Applied Physics Letters, Vol. 101, Núm. 25
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Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
Nanoscale Research Letters, Vol. 7
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Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
Applied Physics Letters, Vol. 100, Núm. 1
2011
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Inhibition of in desorption in diluted nitride InAsN quantum dots
Applied Physics Letters, Vol. 98, Núm. 7
2010
2009
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Aberration-corrected scanning transmission electron microscopy: From atomic imaging and analysis to solving energy problems
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 367, Núm. 1903, pp. 3709-3733
1994
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Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm-2) and unstrained epilayers
Applied Physics Letters, Vol. 65, Núm. 19, pp. 2460-2462