Materiales y Nanotecnología para la Innovación
TEP946
Oak Ridge National Laboratory
Oak Ridge, Estados UnidosPublicaciones en colaboración con investigadores/as de Oak Ridge National Laboratory (30)
2020
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The effect of shear-induced fiber alignment on viscosity for 3D printing of reinforced polymers
Solid Freeform Fabrication 2018: Proceedings of the 29th Annual International Solid Freeform Fabrication Symposium - An Additive Manufacturing Conference, SFF 2018
2017
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Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Applied Surface Science, Vol. 395, pp. 136-139
2016
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Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots
Journal of Materials Science, Vol. 51, Núm. 16, pp. 7691-7698
2015
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Determination of Local Chemistry Composition of Low-Dimensional Semiconductor Nanostructures Through the use of High-Resolution HAADF images
Microscopy and Microanalysis, Vol. 21, pp. 2083-2084
2013
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Influence of RF-sputtering power on formation of vertically stacked Si
1-x
Ge
x
nanocrystals between ultra-thin amorphous Al
2
O
3
layers: Structural and photoluminescence properties
Journal of Physics D: Applied Physics, Vol. 46, Núm. 38
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Photoluminescence enhancement of InAs(Bi) quantum dots by bi clustering
Applied Physics Express, Vol. 6, Núm. 4
2012
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Initial Results from a 200 kV UltraSTEM
Microscopy and Microanalysis, Vol. 18, Núm. S2, pp. 326-327
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Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions
Journal of Applied Physics
2011
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Calculation of integrated intensities in aberration-corrected Z-contrast images
Journal of Electron Microscopy, Vol. 60, Núm. 1, pp. 29-33
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Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy
Microscopy and Microanalysis, Vol. 17, Núm. 4, pp. 578-581
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Distribution of bismuth atoms in epitaxial GaAsBi
Applied Physics Letters, Vol. 98, Núm. 10
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Seeing inside materials by aberration-corrected electron microscopy
International Journal of Nanotechnology, Vol. 8, Núm. 10-12, pp. 935-947
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Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots
Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778
2010
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Active and stable embedded Au@CeO2 catalysts for preferential oxidation of CO
Chemistry of Materials, Vol. 22, Núm. 14, pp. 4335-4345
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Exploring semiconductor quantum dots and wires by high resolution electron microscopy
Journal of Physics: Conference Series
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Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy
Nanotechnology, Vol. 21, Núm. 32
2009
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Aberration-corrected scanning transmission electron microscopy: From atomic imaging and analysis to solving energy problems
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 367, Núm. 1903, pp. 3709-3733
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Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12
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Column-by-column compositional mapping by Z-contrast imaging
Ultramicroscopy, Vol. 109, Núm. 2, pp. 172-176
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Erratum to: "Column-by-column compositional mapping by Z-contrast imaging" [Ultramicroscopy 109(2) (2009) 172-176] (DOI:10.1016/j.ultramic.2008.10.008)
Ultramicroscopy