Materiales y Nanotecnología para la Innovación
TEP946
Paul Drude Institute for Solid State Electronics
Berlín, AlemaniaPublicaciones en colaboración con investigadores/as de Paul Drude Institute for Solid State Electronics (2)
2012
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Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots
Applied Physics Letters, Vol. 101, Núm. 1
2011
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Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots
Journal of Physics: Conference Series