Publicacións nas que colabora con Juan G. Lozano (20)

2012

  1. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

2011

  1. Fabrication of barbed-shaped SnO@SnO2 core/shell nanowires

    Journal of Physical Chemistry C, Vol. 115, Núm. 11, pp. 4495-4501

  2. Growth and characterization of InAlN layers nearly lattice-matched to GaN

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 7-8, pp. 2500-2502

2010

  1. Natural oxidation of InN quantum dots: The role of cubic InN

    Physica Status Solidi (C) Current Topics in Solid State Physics

  2. Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase

    Nanotechnology, Vol. 21, Núm. 18

  3. Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

    Acta Materialia, Vol. 58, Núm. 12, pp. 4120-4125

2009

  1. Determination of the composition of InxGa1-xN from strain measurements

    Acta Materialia, Vol. 57, Núm. 19, pp. 5681-5692

  2. Structural changes during the natural aging process of InN quantum dots

    Journal of Applied Physics, Vol. 105, Núm. 1

2008

  1. Strain relief and nucleation mechanisms of InN quantum dots

    Quantum Dots: Research, Technology and Applications (Nova Science Publishers, Inc.), pp. 267-298

  2. Structure of cubic polytype indium nitride layers on top of modified sapphire substrates

    Physica Status Solidi (C) Current Topics in Solid State Physics

2007

  1. Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots

    Applied Physics Letters, Vol. 91, Núm. 7

  2. Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

    Applied Physics Letters, Vol. 90, Núm. 9

  3. Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers

    Physica Status Solidi (C) Current Topics in Solid State Physics

  4. Strain mapping at the atomic scale in highly mismatched heterointerfaces

    Advanced Functional Materials, Vol. 17, Núm. 14, pp. 2588-2593

  5. Strain relief analysis of InN quantum dots grown on GaN

    Nanoscale Research Letters, Vol. 2, Núm. 9, pp. 442-446

2006

  1. Misfit relaxation of InN quantum dots: Effect of the GaN capping layer

    Applied Physics Letters, Vol. 88, Núm. 15

  2. Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

    Physica Status Solidi (C) Current Topics in Solid State Physics

2005

  1. An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1096-1102

  2. Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

    Applied Physics Letters, Vol. 87, Núm. 26, pp. 1-3

  3. Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy

    Journal of Applied Physics, Vol. 98, Núm. 2