Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Madrid (11)

2009

  1. Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

    Applied Physics Letters, Vol. 94, Núm. 4

2004

  1. Anomalous relaxation in combined low and high temperature growth of InGaAs/GaAs epilayers

    Design and Nature

  2. Epilayer thickness influence on composition modulation of low temperature grown InGaAs/GaAs(001) layers

    Journal of Optoelectronics and Advanced Materials, Vol. 6, Núm. 3, pp. 805-810

  3. Thickness influence on spinodal decomposition in In0.2Ga 0.8As/GaAs low temperature growth

    Design and Nature

2003

  1. Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

    Physica E: Low-Dimensional Systems and Nanostructures

2002

  1. Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers

    Physical Review B - Condensed Matter and Materials Physics, Vol. 65, Núm. 24, pp. 2413011-2413014

1997

  1. Advantages of thin interfaces in step-graded buffer structures

    Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 41-45

1996

  1. Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

    Journal of Crystal Growth, Vol. 169, Núm. 4, pp. 649-659

1994

  1. A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 196-199

1993

  1. A study of the evolution process of antiphase boundaries in GaAs on Si

    Journal of Electronic Materials, Vol. 22, Núm. 5, pp. 567-572

  2. Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

    Materials Letters, Vol. 15, Núm. 5-6, pp. 353-355