DAVID
GONZALEZ ROBLEDO
Catedrático de Universidad
DANIEL
ARAUJO GAY
Catedrático de Universidad
Publicacions en què col·labora amb DANIEL ARAUJO GAY (13)
2006
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Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy
Physica Status Solidi (C) Current Topics in Solid State Physics
2005
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Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy
Applied Physics Letters, Vol. 87, Núm. 26, pp. 1-3
2000
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Control of phase modulation in InGaAs epilayers
Applied Physics Letters, Vol. 76, Núm. 22, pp. 3236-3238
1999
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Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layers
Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 302-304
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Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers
Applied Physics Letters, Vol. 74, Núm. 18, pp. 2649-2651
1998
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Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems
Applied Physics Letters, Vol. 72, Núm. 15, pp. 1875-1877
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Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs
Applied Surface Science, Vol. 123-124, pp. 303-307
1997
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A work-hardening based model of the strain relief in multilayer graded-buffer structures
Applied Physics Letters, Vol. 71, Núm. 21, pp. 3099-3101
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Advantages of thin interfaces in step-graded buffer structures
Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 41-45
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Work-hardening effects in the lattice relaxation of single lay er heterostructures
Applied Physics Letters, Vol. 71, Núm. 17, pp. 2475-2477
1995
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Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication
Applied Physics Letters, Vol. 67, pp. 3632
1994
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Step-graded buffer layer study of the strain relaxation by transmission electron microscopy
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 497-501
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Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519