DAVID
GONZALEZ ROBLEDO
Catedrático de Universidad
TERESA
BEN FERNANDEZ
Profesora Titular de Universidad
Publicaciones en las que colabora con TERESA BEN FERNANDEZ (46)
2024
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Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots
Nanomaterials, Vol. 14, Núm. 4
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Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages
Applied Surface Science, Vol. 644
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Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing
ACS Applied Nano Materials, Vol. 7, Núm. 15, pp. 17553-17560
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Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing
Small, Vol. 20, Núm. 7
2023
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Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions
Applied Surface Science, Vol. 607
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Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
Nanomaterials, Vol. 13, Núm. 5
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Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications
Advances in Nanomaterials for Photovoltaic Applications (MDPI), pp. 95-110
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Unintentional Doping in GaAsSb/GaAsN Superlattice Solar Cells
2023 14th Spanish Conference on Electron Devices (CDE)
2022
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Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD
Applied Surface Science, Vol. 573
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Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
Applied Surface Science, Vol. 604
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Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications
Nanomaterials, Vol. 12, Núm. 8
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Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate
Nanomaterials, Vol. 12, Núm. 14
2021
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Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features
Applied Surface Science, Vol. 537
2020
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Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells
Solar Energy Materials and Solar Cells, Vol. 210
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Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures
Applied Surface Science, Vol. 508
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Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures
Journal of Alloys and Compounds, Vol. 832
2019
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Control of nitrogen inhomogeneities in Type-I and Type-II GaAsSbN superlattices for solar cell devices
Nanomaterials, Vol. 9, Núm. 4
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Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies
Applied Surface Science, Vol. 485, pp. 29-34
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Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices
Applied Surface Science, Vol. 475, pp. 473-478
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Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
Solar Energy Materials and Solar Cells, Vol. 200