DAVID
GONZALEZ ROBLEDO
Catedrático de Universidad
Universidad Politécnica de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (22)
2024
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Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages
Applied Surface Science, Vol. 644
2023
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Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
Nanomaterials, Vol. 13, Núm. 5
2022
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Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
Applied Surface Science, Vol. 604
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Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications
Nanomaterials, Vol. 12, Núm. 8
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Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate
Nanomaterials, Vol. 12, Núm. 14
2018
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GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)
2002
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Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation
Microelectronics Journal
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Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates
Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543
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The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures
Microelectronics Journal
2001
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Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors
Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392
1999
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Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes
Microelectronics Journal, Vol. 30, Núm. 4, pp. 427-431
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Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy
Microelectronics Journal, Vol. 30, Núm. 4, pp. 373-378
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New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well
Microelectronics Journal, Vol. 30, Núm. 4, pp. 467-470
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Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut
Journal of Crystal Growth, Vol. 201, pp. 1085-1088
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Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 1 1)B GaAs for long wavelength applications
Journal of Crystal Growth, Vol. 206, Núm. 4, pp. 287-293
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Study of the relaxation in InGaAsSQW grown on (111)B substrates
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS
1998
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Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs
Applied Surface Science, Vol. 123-124, pp. 303-307
1996
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Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers
Journal of Crystal Growth, Vol. 169, Núm. 4, pp. 649-659
1995
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Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication
Applied Physics Letters, Vol. 67, pp. 3632
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Strain relaxation in step and linearly-graded InGaAs buffer layers on (001)GaAs
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995