Publicaciones en colaboración con investigadores/as de University of Sheffield (39)

2017

  1. Proton radiation effect on InAs avalanche photodiodes

    Optics Express, Vol. 25, Núm. 3, pp. 2818-2825

2009

  1. InAs/GaAs quantum dots morphology: Nanometric scale HAADF simulations

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 165, Núm. 1-2, pp. 88-93

2007

  1. Effects of alloy intermixing on the lateral confinement potential in InAs/GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy

    Applied Physics Letters, Vol. 90, Núm. 16

2006

  1. 1.3m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

    Electronics Letters, Vol. 42, Núm. 16, pp. 922-923

  2. High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

    Proceedings of SPIE - The International Society for Optical Engineering

  3. High-performance 1.3μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

    IEE Proceedings: Optoelectronics

2005

  1. An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1096-1102

  2. Characterization of structure and defects in dot-in-well laser structures

    Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 793-797

  3. Critical barrier thickness for the formation of InGaAs/GaAs quantum dots

    Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 798-803

  4. Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures

    Journal of Crystal Growth

  5. Growth and characterisation of multiple layer quantum dot lasers

    Progress in Biomedical Optics and Imaging - Proceedings of SPIE

  6. Growth and characterization of 1.3 mu m multi-layer quantum dots lasers incorporating high growth temperature spacer layers

    Physics of Semiconductors, Pts A and B

  7. Growth and characterization of 1.3μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers

    AIP Conference Proceedings

  8. Influence of structure and defects on the performance of dot-in-well laser structures

    Proceedings of SPIE - The International Society for Optical Engineering

  9. Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

    Physica E: Low-Dimensional Systems and Nanostructures

  10. Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser

    Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 779-783

  11. Spinodal decomposition in GaInNAs/GaAs multi-quantum wells

    Physica Status Solidi C: Conferences

  12. Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures

    Physica E: Low-Dimensional Systems and Nanostructures

  13. Structural and optical properties of high in and N content GaInNAs quantum wells

    Thin Solid Films, Vol. 483, Núm. 1-2, pp. 185-190

  14. Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy

    Journal of Applied Physics, Vol. 98, Núm. 2