Publicaciones en colaboración con investigadores/as de Centre National de la Recherche Scientifique (5)

2022

  1. High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

    Applied Physics Letters, Vol. 121, Núm. 7

  2. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    Nanomaterials, Vol. 12, Núm. 23

2020

  1. Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231

2018

  1. High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

    Applied Physics Letters, Vol. 112, Núm. 10

2010

  1. Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates

    Physica Status Solidi (A) Applications and Materials, Vol. 207, Núm. 9, pp. 2023-2028