Publicaciones en colaboración con investigadores/as de University of Nottingham (9)

2013

  1. Extreme voltage recovery in GaAs:Ti intermediate band solar cells

    Solar Energy Materials and Solar Cells

2012

  1. Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

    Scripta Materialia, Vol. 66, Núm. 6, pp. 351-354

2011

  1. Distribution of bismuth atoms in epitaxial GaAsBi

    Applied Physics Letters, Vol. 98, Núm. 10

2010

  1. Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers

    Applied Surface Science, Vol. 256, Núm. 18, pp. 5688-5690

2009

  1. Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

    Journal of Applied Physics, Vol. 106, Núm. 2

  2. Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates

    Microelectronics Journal, Vol. 40, Núm. 3, pp. 537-539

2008

  1. Aqueous near-infrared fluorescent composites based on apoferritin- encapsulated PbS quantum dots

    Advanced Materials, Vol. 20, Núm. 19, pp. 3592-3596

2007

  1. A TEM study of the evolution of InAs/GaAs self-assembled dots on (3 1 1)B GaAs with growth interruption

    Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 168-170

  2. Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

    Applied Physics Letters, Vol. 91, Núm. 25