FRANCISCO MIGUEL
MORALES SANCHEZ
Catedrático de Universidad
DAVID
GONZALEZ ROBLEDO
Catedrático de Universidad
Publicacións nas que colabora con DAVID GONZALEZ ROBLEDO (15)
2012
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High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures
Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62
2010
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Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase
Nanotechnology, Vol. 21, Núm. 18
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Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
Acta Materialia, Vol. 58, Núm. 12, pp. 4120-4125
2009
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Determination of the composition of InxGa1-xN from strain measurements
Acta Materialia, Vol. 57, Núm. 19, pp. 5681-5692
2008
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Electron transport properties of indium oxide - Indium nitride metal-oxide-semiconductor heterostructures
Physica Status Solidi (C) Current Topics in Solid State Physics
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Electronic and photoconductive properties of ultrathin InGaN photodetectors
Journal of Applied Physics, Vol. 103, Núm. 7
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InN/In2O3 heterostructures
Physica Status Solidi (C) Current Topics in Solid State Physics
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Structure of cubic polytype indium nitride layers on top of modified sapphire substrates
Physica Status Solidi (C) Current Topics in Solid State Physics
2007
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Coalescence aspects of III-nitride epitaxy
Journal of Applied Physics, Vol. 101, Núm. 5
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Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer
Applied Physics Letters, Vol. 90, Núm. 9
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Effect of island coalescence on structural and electrical properties of InN thin films
Journal of Crystal Growth, Vol. 300, Núm. 1, pp. 50-56
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Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers
Physica Status Solidi (C) Current Topics in Solid State Physics
2006
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Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy
Superlattices and Microstructures, Vol. 40, Núm. 4-6 SPEC. ISS., pp. 289-294
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Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
Journal of Applied Physics, Vol. 100, Núm. 9
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Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
Journal of Applied Physics, Vol. 100, Núm. 9