Claude Bernard University Lyon 1-ko ikertzaileekin lankidetzan egindako argitalpenak (2)

2005

  1. Defect morphology and strain of CVD grown 3C-SiC layers: Effect of the carbonization process

    Physica Status Solidi (A) Applications and Materials Science

2004

  1. Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy

    Materials Science Forum